The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 22, 2023
Filed:
Mar. 18, 2022
Applicant:
Hefei Reliance Memory Limited, Hefei, CN;
Inventors:
Brent Haukness, Monte Sereno, CA (US);
Zhichao Lu, San Jose, CA (US);
Assignee:
Hefei Reliance Memory Limited, Hefei, CN;
Primary Examiner:
Int. Cl.
CPC ...
G11C 13/00 (2006.01); G11C 11/56 (2006.01);
U.S. Cl.
CPC ...
G11C 13/0069 (2013.01); G11C 11/56 (2013.01); G11C 13/004 (2013.01); G11C 13/0028 (2013.01); G11C 13/0061 (2013.01); G11C 2013/0045 (2013.01); G11C 2013/0076 (2013.01); G11C 2013/0078 (2013.01); G11C 2013/0092 (2013.01); G11C 2213/79 (2013.01);
Abstract
A method and related apparatus for using an indication of RRAM cell resistance to determine a write condition are disclosed. A cell characteristic of an RRAM cell may be determined to a higher bit resolution than a data read value. A write condition may be selected for the RRAM cell, based on the cell characteristic. The RRAM cell may be written to, using the selected write condition.