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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11732354 B1

PDFFull Text
Date of Patent:
Aug. 22, 2023

Filed:

Apr. 20, 2021

Method and apparatus for forming layer, metal oxide transistor and fabrication method thereof

Applicant:

Iucf-hyu (Industry-university Cooperation Foundation Hanyang University), Seoul, KR;

Inventors:

Myung Mo Sung, Seoul, KR;

Jinwon Jung, Suwon-si, KR;

Jin Seon Park, Seoul, KR;

Assignee:

IUCF-HYU (INDUSTRY-UNIVERSITY COOPERATION FOUNDATION HANYANG UNIVERSITY), Seoul, KR;

Attorney:

Sughrue Mion, PLLC

Primary Examiner:

Asok K Sarkar

Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); H01L 29/786 (2006.01); C23C 16/455 (2006.01); C23C 16/44 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
C23C 16/407 (2013.01); C23C 16/4408 (2013.01); C23C 16/45527 (2013.01); C23C 16/45553 (2013.01); C23C 16/45557 (2013.01); H01L 21/0262 (2013.01); H01L 21/02554 (2013.01); H01L 29/7869 (2013.01); H01L 21/02488 (2013.01); H01L 29/66969 (2013.01);
Abstract

A layer forming method according to one embodiment of the present invention contains a source gas dosing/pressurizing step of dosing a source gas into a chamber having a substrate loaded therein in a state in which the outlet of the chamber is closed, thereby increasing the pressure in the chamber and adsorbing the source gas onto the substrate; a first main purging step of purging the chamber, after the source gas dosing/pressurizing step; a reactive gas dosing step of dosing a reactive gas into the chamber, after the first main purging step; and a second main purging step of purging the chamber, after the reactive gas dosing step.

Find Patent Forward Citations

Sung, Myung. (2023). Method and apparatus for forming layer, metal oxide transistor and fabrication method thereof (U.S. Patent No. 11732354). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11732354

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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