The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Feb. 05, 2021
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventors:

Koichi Harada, Bunkyo, JP;

Yasuhiro Goto, Minato, JP;

Kenji Essaki, Kawasaki, JP;

Yasushi Hattori, Kawasaki, JP;

Maki Yonetsu, Mitaka, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H05K 1/03 (2006.01); C04B 35/584 (2006.01); H01L 23/15 (2006.01);
U.S. Cl.
CPC ...
H05K 1/0306 (2013.01); C04B 35/584 (2013.01); H01L 23/15 (2013.01);
Abstract

A structure according to the embodiment includes a first crystal grain, a second crystal grain, and a first region. The first crystal grain includes silicon nitride. The second crystal grain includes a first element selected from a first group consisting of scandium, yttrium, lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, lutetium, aluminum, chromium, zirconium, magnesium, zinc, titanium, gallium, beryllium, calcium, strontium, barium, hafnium, vanadium, niobium, tantalum, tungsten, iron, cobalt, nickel, and copper, and oxygen. The first region includes an oxide of the first element.


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