The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jun. 21, 2021
Infineon Technologies Austria Ag, Villach, AT;
Stefan Karner, Klagenfurt, AT;
Oliver Blank, Villach, AT;
Günter Denifl, Annenheim, AT;
Germano Galasso, Unterhaching, DE;
Saurabh Roy, Villach, AT;
Hans-Joachim Schulze, Taufkirchen, DE;
Michael Stadtmueller, Villach, AT;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A semiconductor device is described. The semiconductor device includes: a semiconductor substrate; an electrode structure on or in the semiconductor substrate, the electrode structure including an electrode and an insulating material that separates the electrode from the semiconductor substrate; and a strain-inducing material embedded in the electrode. The electrode structure adjoins a region of the semiconductor substrate through which current flows in a first direction during operation of the semiconductor device. The electrode is under either tensile or compressive stress in the first direction. The strain-inducing material either enhances or at least partly counteracts the stress of the electrode in the first direction. Methods of producing the semiconductor device are also described.