The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jun. 21, 2021
Applicant:

Ningbo Sunny Opotech Co., Ltd., Zhejiang, CN;

Inventors:

Mingzhu Wang, Ningbo, CN;

Bojie Zhao, Ningbo, CN;

Takehiko Tanaka, Ningbo, CN;

Zhenyu Chen, Ningbo, CN;

Heng Jiang, Ningbo, CN;

Nan Guo, Ningbo, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 21/02 (2006.01); H01L 23/06 (2006.01); H04N 23/57 (2023.01);
U.S. Cl.
CPC ...
H01L 27/14683 (2013.01); H01L 21/02 (2013.01); H01L 23/06 (2013.01); H01L 27/14618 (2013.01); H04N 23/57 (2023.01);
Abstract

The present invention provides a semiconductor packaging method and semiconductor device based on a molding process. In the packaging method, first, at least a portion of a compensation part is kept on at least a portion of a bonding region formed between a first adjoining surface of a semiconductor element and a second adjoining surface of a packaging component, to form a semi-finished product of a semiconductor device; then, during hardening of the packaging component, the compensation part is caused to undergo different degrees of deformation at different positions to compensate for a difference between a magnitude of deformation of the packaging component and a magnitude of deformation of the semiconductor element, so as to package the semiconductor element to form the semiconductor device. By means of the method, undesirable phenomena such as cracking and deformation of the surface of the semiconductor element can be avoided.


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