The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Jul. 22, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company LTD, Hsinchu, TW;
Abstract
A method is provided for light shielding a charge storage device of an image sensor pixel that includes a photosensitive device and the charge storage device and a dielectric layer covering the photosensitive device and the charge storage device. The method includes performing etching of the dielectric layer to define an undercut volume beneath the dielectric layer and an access opening through the dielectric layer to the undercut volume, and performing physical vapor deposition (PVD) of a light blocking material to both: fill the undercut volume with the light blocking material to form a light blocking layer covering the charge storage device, and fill the access opening with the light blocking material to form a light blocking plug. An image sensor pixel formed by such a process, and an image sensor comprising an array of image sensor pixels, are also disclosed.