Single diffusion break isolation for gate-all-around field-effect transistor devices

Abstract

Devices and methods are provided for forming single diffusion break isolation structures for integrated circuit devices including gate-all-around FET devices such as nanosheet FET devices and nanowire FET devices. For example, a semiconductor integrated circuit device includes first and second gate-all-around field-effect transistor devices disposed in first and second device regions, respectively, of a semiconductor substrate. A single diffusion break isolation structure is disposed between the first and second device regions. The single diffusion break isolation structure includes a dummy gate structure disposed on the semiconductor substrate between a first source/drain layer of the first gate-all-around field-effect transistor device and a second source/drain layer of the second gate all-around field-effect transistor device. The single diffusion break isolation structure is configured to electrically isolate the first and second source/drain layers.