The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Sep. 21, 2021
Applicants:
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Inventors:
Zhuo Cheng, Beijing, CN;
Xiaodong Wang, Beijing, CN;
Assignees:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 21/78 (2006.01); H01L 21/311 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 21/31144 (2013.01); H01L 21/76802 (2013.01); H01L 21/76877 (2013.01); H01L 21/78 (2013.01);
Abstract
A semiconductor structure is provided. The semiconductor structure includes a wafer having a functional region and a non-functional region surrounding the functional region; a first dielectric layer formed on the wafer; a first opening formed in the first dielectric layer on the non-function region of the wafer; and a first connection layer formed in the first opening. The first connection layer closes a top portion of the first opening and a first void is formed in the first connection layer in the first opening.