The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 15, 2023
Filed:
Mar. 09, 2021
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Marcus Johannes Henricus Van Dal, Linden, BE;
Gerben Doornbos, Kessel-Lo, BE;
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Abstract
A semiconductor device includes a substrate, a semiconductor fin, a source/drain structure, a first buried power line, a contact, a first through substrate via (TSV), and a second TSV. The substrate has a well region extending a frontside surface of the substrate into the substrate. The semiconductor fin is on the well region. The source/drain structure is on the semiconductor fin. The first buried power line is electrically coupled to the source/drain structure on the first semiconductor fin. The first buried power line has a length extending along a lengthwise direction of the first semiconductor fin and a height extending within the well region. The first TSV extends from a backside surface of the substrate through the substrate to the first buried power line. The second TSV extends from the backside surface of the substrate to the well region.