The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Jun. 02, 2021
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shan-Yu Huang, Zhubei, TW;

Hsiao-Wen Chung, Taipei, TW;

Yi-Lun Chen, Hsinchu, TW;

Huang-Sheng Lin, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/10 (2006.01); H01L 23/58 (2006.01); H01L 23/00 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 23/10 (2013.01); H01L 23/31 (2013.01); H01L 23/562 (2013.01); H01L 23/585 (2013.01); H01L 2223/54466 (2013.01);
Abstract

A semiconductor structure that includes two circuit regions; two inner seal rings, each of the two inner seal rings surrounding one of the two circuit regions; an outer seal ring surrounding the two inner seal rings, wherein each of the inner seal rings and the outer seal ring has a substantially rectangular periphery with four interior corner seal ring structures; four first redundant regions between the two inner seal rings and the outer seal ring, each of the four first redundant regions being a substantially trapezoidal shape; and first dummy patterns substantially uniformly distributed in the four first redundant regions.


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