The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Oct. 15, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Baekkyu Choi, San Jose, CA (US);

Thomas H. Kinsley, Boise, ID (US);

Fuad Badrieh, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/30 (2006.01); G06F 1/3225 (2019.01); G06F 1/30 (2006.01); G06F 1/3293 (2019.01);
U.S. Cl.
CPC ...
G06F 1/3225 (2013.01); G06F 1/30 (2013.01); G06F 1/3293 (2013.01);
Abstract

A memory device may include a pin for communicating feedback regarding a supply voltage to a power management component, such as a power management integrated circuit (PMIC). The memory device may bias the pin to a first voltage indicating that a supply voltage is within a target range. The memory device may subsequently determine that a supply voltage is outside the target range and transition the voltage at the pin from the first voltage to a second voltage indicating that the supply voltage is outside the target range. The memory device may select the second voltage based on whether the supply voltage is above or below the target range.


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