The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 15, 2023

Filed:

Apr. 28, 2021
Applicant:

The Institute of Optics and Electronics, the Chinese Academy of Sciences, Sichuan, CN;

Inventors:

Xiangang Luo, Sichuan, CN;

Xiong Li, Sichuan, CN;

Mingbo Pu, Sichuan, CN;

Xiaoliang Ma, Sichuan, CN;

Kaipeng Liu, Sichuan, CN;

Zeyu Zhao, Sichuan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C03C 15/00 (2006.01); G03F 7/00 (2006.01); G03F 7/20 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
C03C 15/00 (2013.01); G03F 7/2043 (2013.01); H01J 37/32568 (2013.01); H01J 2237/24585 (2013.01); H01J 2237/3341 (2013.01);
Abstract

A method for etching a curved substrate is provided, including: forming a conductive thin film layer with an etched pattern on the curved substrate; supplying power to the conductive thin film layer such that the conductive thin film layer has an equal potential at each position of the conductive thin film layer; etching each position of the curved substrate to an etching depth corresponding to the potential at each position of the conductive thin film layer based on the etched pattern of the conductive thin film layer, so as to obtain the curved substrate having a consistent etching depth at each position of the curved substrate. With the etching method, it is possible to etch an arbitrary curved surface to obtain a microstructure with a uniform processing depth.


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