The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Nov. 17, 2021
Globalfoundries U.s. Inc., Malta, NY (US);
Asif Chowdhury, Clifton Park, NY (US);
Yusheng Bian, Ballston Lake, NY (US);
GlobalFoundries U.S. Inc., Malta, NY (US);
Abstract
Structures for an avalanche photodetector and methods of forming a structure for an avalanche photodetector. The structure includes a first semiconductor layer having a first portion and a second portion, and a second semiconductor layer stacked in a vertical direction with the first semiconductor layer. The first portion of the first semiconductor layer defines a multiplication region of the avalanche photodetector, and the second semiconductor layer defines an absorption region of the avalanche photodetector. The structure further includes a charge sheet in the second portion of the first semiconductor layer. The charge sheet has a thickness that varies with position in a horizontal plane, and the charge sheet is positioned in the vertical direction between the second semiconductor layer and the first portion of the first semiconductor layer.