The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Sep. 18, 2020
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsin-Chu, TW;

Inventors:

Kai-Yun Yang, Hsin-Chu, TW;

Chun-Yuan Chen, Tainan, TW;

Ching I Li, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0304 (2006.01); H01L 31/0352 (2006.01); H01L 31/18 (2006.01); H01L 27/146 (2006.01); H01L 31/103 (2006.01);
U.S. Cl.
CPC ...
H01L 31/03042 (2013.01); H01L 27/14643 (2013.01); H01L 27/14698 (2013.01); H01L 31/03529 (2013.01); H01L 31/1035 (2013.01); H01L 31/1864 (2013.01);
Abstract

Various embodiments of the present disclosure are directed towards an image sensor having a photodetector disposed in a semiconductor substrate. The photodetector comprises a first doped region comprising a dopant having a first doping type. A deep well region is disposed within the semiconductor substrate, where the deep well region extends from a back-side surface of the semiconductor substrate to a top surface of the first doped region. A second doped region is disposed within the semiconductor substrate and abuts the first doped region. The second doped region and the deep well region comprise a second dopant having a second doping type opposite the first doping type, where the second dopant comprises gallium.


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