The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Feb. 11, 2022
Applicant:
Wolfspeed, Inc., Durham, NC (US);
Inventors:
Philipp Steinmann, Durham, NC (US);
Edward Van Brunt, Raleigh, NC (US);
Jae Hyung Park, Apex, NC (US);
Vaishno Dasika, Morrisville, NC (US);
Assignee:
Wolfspeed, Inc., Durham, NC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/16 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7802 (2013.01); H01L 29/1608 (2013.01); H01L 29/7833 (2013.01);
Abstract
A semiconductor device includes a semiconductor layer structure comprising a source/drain region, a gate dielectric layer on the semiconductor layer structure, and a gate electrode on the gate dielectric layer. The source/drain region comprises a first portion comprising a first dopant concentration and a second portion comprising a second dopant concentration. The second portion is closer to a center of the gate electrode than the first portion.