The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Aug. 11, 2021
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Takeshi Suwa, Kawasaki Kanagawa, JP;
Tomoko Matsudai, Shibuya Tokyo, JP;
Yoko Iwakaji, Meguro Tokyo, JP;
Hiroko Itokazu, Kawasaki Kanagawa, JP;
Kabushiki Kaisha Toshiba, Tokyo, JP;
Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;
Abstract
A semiconductor device includes a semiconductor part, first and second electrodes, and a control electrode. The semiconductor part is provided between the first and second electrodes. The semiconductor part includes first to seventh layers. The second of a second conductivity type is provided between the first layer of a first conductivity type and the first electrode. The third and fourth layers of the first conductivity type are arranged along the second layer between the second layer and the first electrode. The fifth layer of the second conductivity type is provided between the second electrode and the first layer. The sixth and seventh layers are arranged along the fifth layer between the first and fifth layers. The sixth and seventh layers include the first-conductivity-type impurities with first and second surface densities, respectively. The first surface density is greater than the second surface density.