The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Aug. 13, 2021
Applicant:

Intel Corporation, Santa Clara, CA (US);

Inventors:

Ravi Pillarisetty, Portland, OR (US);

Van H. Le, Beaverton, OR (US);

Jeanette M. Roberts, North Plains, OR (US);

David J. Michalak, Portland, OR (US);

James S. Clarke, Portland, OR (US);

Zachary R. Yoscovits, Beaverton, OR (US);

Assignee:

Intel Corporation, Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/417 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/778 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/42376 (2013.01); H01L 29/0649 (2013.01); H01L 29/41791 (2013.01); H01L 29/66431 (2013.01); H01L 29/66439 (2013.01); H01L 29/66795 (2013.01); H01L 29/66977 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/165 (2013.01); H01L 29/7781 (2013.01); H01L 29/7782 (2013.01);
Abstract

Disclosed herein are quantum dot devices with trenched substrates, as well as related computing devices and methods. For example, in some embodiments, a quantum dot device may include: a substrate having a trench disposed therein, wherein a bottom of the trench is provided by a first material, and a quantum well stack at least partially disposed in the trench. A material of the quantum well stack may be in contact with the bottom of the trench, and the material of the quantum well stack may be different from the first material.


Find Patent Forward Citations

Loading…