The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Nov. 21, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Yong Jun Choi, Suwon-si, KR;
Seok Hoon Kim, Suwon-si, KR;
Young-Hoo Kim, Suwon-si, KR;
In Gi Kim, Suwon-si, KR;
Sung Hyun Park, Suwon-si, KR;
Seung Min Shin, Suwon-si, KR;
Kun Tack Lee, Suwon-si, KR;
Jinwoo Lee, Suwon-si, KR;
Hun Jae Jang, Suwon-si, KR;
Ji Hoon Cha, Suwon-si, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/67 (2006.01); H01L 21/687 (2006.01); B08B 3/08 (2006.01);
U.S. Cl.
CPC ...
H01L 21/67167 (2013.01); B08B 3/08 (2013.01); H01L 21/67034 (2013.01); H01L 21/67051 (2013.01); H01L 21/67063 (2013.01); H01L 21/68707 (2013.01);
Abstract
A multi-chamber apparatus for processing a wafer, the apparatus including a high etch rate chamber to receive the wafer and to etch silicon nitride with a phosphoric acid solution; a rinse chamber to receive the wafer and to clean the wafer with an ammonia mixed solution; and a supercritical drying chamber to dry the wafer with a supercritical fluid.