The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Feb. 26, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventor:
Christopher R. Hatem, Seabrook, NH (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01J 37/317 (2006.01);
U.S. Cl.
CPC ...
H01J 37/32596 (2013.01); H01J 37/3171 (2013.01); H01J 37/32422 (2013.01); H01J 37/32449 (2013.01); H01J 2237/2001 (2013.01);
Abstract
Provided herein are approaches for controlling radicals in proximity to a wafer. In some embodiments, a system may include a radical source operable to generate radicals in proximity to the wafer, and a filter positioned between the radical source and the wafer, wherein the filter includes a first plate operable to control radicals generated by the radical source. The system may further include an ion source operable to deliver an ion beam to the wafer, wherein the ion beam passes outside the filter.