The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
Jan. 21, 2022
Nuflare Technology, Inc., Yokohama, JP;
Kei Obara, Kawasaki, JP;
Kazuyuki Higashi, Yokohama, JP;
Miyoko Shimada, Yokohama, JP;
Yoshiaki Shimooka, Sagamihara, JP;
Hitomi Yamaguchi, Yokohama, JP;
Yoshikuni Goshima, Yokohama, JP;
Hirofumi Morita, Setagaya-ku, JP;
Hiroshi Matsumoto, Yokohama, JP;
NuFlare Technology, Inc., Yokohama, JP;
Abstract
A semiconductor device according to an embodiment includes: a substrate including a plurality of through holes provided at predetermined intervals along a first direction in a substrate surface and along a second direction intersecting the first direction in the substrate surface; an insulating layer provided on the substrate, the insulating layer being penetrated by the through holes; a plurality of first electrodes provided on the insulating layer, the first electrodes being adjacent to the respective through holes in the first direction; a plurality of second electrodes provided on the insulating layer, the second electrodes being adjacent to the respective through holes in the first direction, the second electrodes being provided to face the first electrodes, the second electrodes being held at a predetermined potential; and a wiring layer provided on the insulating layer, the wiring layer electrically connecting the adjacent second electrodes.