The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Aug. 10, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Xiaodong Xu, Wuhan, CN;

Xiangming Zhao, Wuhan, CN;

Shunlin Liu, Wuhan, CN;

Yi Chen, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/28 (2006.01); G01R 31/317 (2006.01); G01R 31/3185 (2006.01); G11C 7/22 (2006.01); G11C 29/02 (2006.01);
U.S. Cl.
CPC ...
G01R 31/31713 (2013.01); G01R 31/318572 (2013.01); G11C 7/222 (2013.01); G11C 29/023 (2013.01);
Abstract

A memory device includes a plurality of pins, a controller die coupled to the isolation pin, and a memory die. The plurality of pins include an isolation pin, a test mode select pin configured to switch an operation mode of the memory die, a test clock pin configured to receive a test clock, and a test data pin configured to perform a data transmission. The controller die is coupled to the isolation pin. The memory die is coupled to the test mode select pin, the test clock pin, and the test data pin.


Find Patent Forward Citations

Xu, Xiaodong. (2023). Method of testing memory device employing limited number of test pins and memory device utilizing same (U.S. Patent No. 11719748). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11719748

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…