The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

Jun. 28, 2018
Applicant:

Hitachi High-tech Corporation, Tokyo, JP;

Inventors:

Masaaki Komori, Tokyo, JP;

Katsuo Oki, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/307 (2006.01); G01R 31/28 (2006.01); G01R 31/311 (2006.01);
U.S. Cl.
CPC ...
G01R 31/307 (2013.01); G01R 31/2882 (2013.01); G01R 31/311 (2013.01);
Abstract

A semiconductor inspection device capable of detecting an abnormality with high sensitivity in a failure analysis of a fine-structured device is provided. An electron optical system radiates an electron beam to a sample on a sample stage. A measurement device measures an output from a measurement probe that is in contact with the sample. An information processing device starts and stops the radiation of the electron beam to the sample, sets a first measurement period in which the measurement device measures the output from the measurement probe during the radiation and a second measurement period in which the measurement device measures the output from the measurement probe after the radiation, and obtains the measurement value of the output from the measurement probe based on a difference between a first measurement value measured in the first measurement period and a second measurement value measured in the second measurement period.


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