The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 08, 2023
Filed:
May. 15, 2020
Applicant:
Tokyo Electron Limited, Tokyo, JP;
Inventors:
Takashi Chiba, Iwate, JP;
Jun Sato, Iwate, JP;
Assignee:
Tokyo Electron Limited, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/04 (2006.01); H01L 21/02 (2006.01); C23C 16/40 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45538 (2013.01); C23C 16/045 (2013.01); C23C 16/402 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01);
Abstract
A deposition method includes causing aminosilane gas to be adsorbed on a substrate in which a recessed portion is formed on a surface of the substrate; causing a first silicon oxide film to be stacked on the substrate by supplying oxidation gas to the substrate to oxidize the aminosilane gas adsorbed on the substrate; and performing a reforming process on the first silicon oxide film by activating, by plasma, a first mixed gas including helium and oxygen, and supplying the first mixed gas to the first silicon oxide film.