The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 08, 2023

Filed:

May. 06, 2022
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Akhil N. Singhal, Portland, OR (US);

Dustin Zachary Austin, Corvallis, OR (US);

Alon Ganany, Tigard, OR (US);

Daniel Boatright, Estacada, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B08B 9/08 (2006.01); B08B 3/08 (2006.01); B08B 5/00 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
B08B 9/08 (2013.01); B08B 3/08 (2013.01); B08B 5/00 (2013.01); C23C 16/4405 (2013.01); B08B 2209/08 (2013.01);
Abstract

Various embodiments include methods and chemistries to etch metal-oxide films. In one embodiment, a method of etching tin oxide (SnO) films includes using thionyl chloride (SOCl) chemistry to produce an etch rate of the SnOfilms of up to 10-times higher as compared with Clchemistry for similar flow-rates and process conditions, and gettering oxygen species from the SnOfilms by using the SOCl, thereby forming volatile SOand volatile SnClto provide human safety and machine safety and operations. Other methods, chemistries, and techniques are disclosed.


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