The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Dec. 15, 2020
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventor:

Andrea Redaelli, Milan, IT;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); G11C 13/00 (2006.01); H10N 70/00 (2023.01); H10N 70/20 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); G11C 13/0004 (2013.01); H10N 70/023 (2023.02); H10N 70/041 (2023.02); H10N 70/066 (2023.02); H10N 70/231 (2023.02); H10N 70/8828 (2023.02); G11C 2013/0083 (2013.01); G11C 2213/71 (2013.01);
Abstract

Electrically formed memory arrays, and methods of processing the same are described herein. A number of embodiments include a plurality of conductive lines separated from one other by an insulation material, a first plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, a storage element material formed around each respective one of the first plurality of conductive extensions, a second plurality of conductive extensions arranged to extend substantially perpendicular to the plurality of conductive lines, and a plurality of single element materials formed around each respective one of the second plurality of conductive extensions.


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