The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

May. 26, 2020
Applicant:

United Microelectronics Corp., Hsin-Chu, TW;

Inventors:

Hui-Lin Wang, Taipei, TW;

Po-Kai Hsu, Tainan, TW;

Jing-Yin Jhang, Tainan, TW;

Yu-Ping Wang, Hsinchu, TW;

Hung-Yueh Chen, Hsinchu, TW;

Wei Chen, Tainan, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 61/00 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/85 (2023.01);
U.S. Cl.
CPC ...
H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); H10N 50/85 (2023.02);
Abstract

A method for fabricating a semiconductor device includes the steps of: forming a magnetic tunneling junction (MTJ) on a substrate; forming a first inter-metal dielectric (IMD) layer around the MTJ; forming a first metal interconnection adjacent to the MTJ; forming a stop layer on the first IMD layer; removing the stop layer to form an opening; and forming a channel layer in the opening to electrically connect the MTJ and the first metal interconnection.


Find Patent Forward Citations

Wang, Hui-Lin. (2023). Semiconductor device and method for fabricating the same (U.S. Patent No. 11716860). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11716860

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…