The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Nov. 30, 2020
Innoscience (Suzhou) Semiconductor Co., Ltd., Suzhou, CN;
Yaobin Guan, Zhuhai, CN;
Jianjian Sheng, Zhuhai, CN;
Zhenzhe Li, Zhuhai, CN;
Junyuan Lv, Zhuhai, CN;
INNOSCIENCE (SUZHOU) SEMICONDUCTOR CO., LTD., Suzhou, CN;
Abstract
An electronic device includes a first group III nitride transistor and an electrostatic discharge (ESD) protection circuit. an electronic device may include a first group III nitride transistor and an ESD protection circuit. The ESD protection circuit may include a first transistor, a second transistor, and a third transistor. The first transistor may have a source and a gate connected to each other and electrically connected to a gate of the first group III nitride transistor. The second transistor may have a source and a gate connected to each other and electrically connected to a source of the first group III nitride transistor. The third transistor may have a drain electrically connected to the gate of the first group III nitride transistor, a gate electrically connected to a drain of the first transistor and to a drain of the second transistor, and a source electrically connected to the source of the first group III nitride transistor.