The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Oct. 22, 2020
Fuji Electric Co., Ltd., Kanagawa, JP;
Yoshiharu Kato, Matsumoto, JP;
Toru Ajiki, Matsumoto, JP;
Tohru Shirakawa, Matsumoto, JP;
Misaki Takahashi, Matsumoto, JP;
Kaname Mitsuzuka, Matsumoto, JP;
Takashi Yoshimura, Matsumoto, JP;
Yuichi Onozawa, Matsumoto, JP;
Hiroshi Takishita, Matsumoto, JP;
Soichi Yoshida, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
Provided is a semiconductor device comprising a semiconductor substrate, wherein the semiconductor substrate includes a hydrogen containing region including hydrogen, and the hydrogen containing region includes a high concentration region with a higher carrier concentration than a virtual carrier concentration determined based on a concentration of hydrogen included and an activation ratio of hydrogen. The semiconductor substrate includes an N type drift region, an N type emitter region that has a higher carrier concentration than that in the drift region, a P type base region, a P type collector region provided to be in contact with a lower surface of the semiconductor substrate, and an N type buffer region that is provided between the collector region and the drift region, and has a higher carrier concentration than that in the drift region, and the hydrogen containing region is included in the buffer region.