The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Apr. 14, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Hidenori Yamaguchi, Hiroshima, JP;

Yoh Matsuda, Hiroshima, JP;

Yuta Nomura, Hiroshima, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/544 (2006.01); H10B 12/00 (2023.01);
U.S. Cl.
CPC ...
H01L 23/562 (2013.01); H01L 23/544 (2013.01); H01L 2223/5446 (2013.01); H10B 12/00 (2023.02);
Abstract

Apparatuses and methods for manufacturing chips are described. An example method includes: forming at least one first dielectric layer above a substrate; forming at least one second dielectric layer above the first dielectric layer; forming a cover layer above the at least one second dielectric layer; forming a groove above the substrate by etching; covering at least an edge surface of the at least one first dielectric layer in the groove with a liner; forming a hole through the cover layer and a portion of the at least one second dielectric layer; depositing a conductive layer in the hole, on the cover layer and the liner; and forming a conductive pillar on the conductive layer in the hole by electroplating.


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