The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 01, 2023
Filed:
Aug. 04, 2021
Taiwan Semiconductor Manufacturing Company, Ltd., Hsin-Chu, TW;
Harry-Hak-Lay Chuang, Zhubei, TW;
Tien-Wei Chiang, Taipei, TW;
Kuo-An Liu, Hsinchu, TW;
Chia-Hsiang Chen, Hsinchu, TW;
Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;
Abstract
In some embodiments, the present application provides a method for manufacture a memory device. The method includes forming a multilayer stack including a first magnetic layer and a first dielectric layer and forming another magnetic layer. The multilayer stack and the another magnetic layer are tailored to meet dimensions of a package structure. The package structure includes a chip having a memory cell and an insulating material enveloping the chip, where an outer surface of the package structure comprises the insulating material. The tailored multilayer stack and the tailored another magnetic layer are attached to the outer surface of the package structure.