The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Jan. 05, 2022
Applicant:

Postech Research and Business Development Foundation, Pohang-Si, KR;

Inventors:

Unyong Jeong, Pohang-si, KR;

Giri Anupam, Pohang-si, KR;

Geonwoo Kim, Pohang-si, KR;

Ghorai Arup, Pohang-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 7/14 (2006.01); C30B 29/46 (2006.01); C30B 30/04 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C30B 29/46 (2013.01); C30B 7/14 (2013.01); C30B 30/04 (2013.01); H01L 21/02293 (2013.01); H01L 21/02422 (2013.01);
Abstract

Provided is a method for forming a chalcogenide thin film, the method including forming a chalcogen element-containing film on a carrier substrate, disposing the chalcogen element-containing film on a silicon wafer, wherein the surface of the silicon wafer and the surface of the chalcogen element-containing film are in contact with each other, performing heat treatment on the silicon wafer and the chalcogen element-containing film at least one time, and removing the carrier substrate. The silicon wafer has a crystal plane of (111).


Find Patent Forward Citations

Jeong, Unyong. (2023). Method for forming chalcogenide thin film (U.S. Patent No. 11713518). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11713518

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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