The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 01, 2023

Filed:

Aug. 06, 2021
Applicant:

Entegris, Inc., Billerica, MA (US);

Inventors:

Troy Scoggins, Decatur, TX (US);

Rex Gerald Sheppard, Decatur, TX (US);

Abuagela H. Rashed, Denton, TX (US);

Jonathan Loyd Burr, Denton, TX (US);

Assignee:

ENTEGRIS, INC., Billerica, MA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 32/956 (2017.01); H01L 21/02 (2006.01); H01L 21/324 (2006.01); C04B 41/87 (2006.01); C04B 35/52 (2006.01); C04B 41/00 (2006.01); C04B 41/50 (2006.01); C01B 32/97 (2017.01); C01B 32/21 (2017.01); H01L 29/16 (2006.01); C04B 111/00 (2006.01);
U.S. Cl.
CPC ...
C01B 32/956 (2017.08); C01B 32/21 (2017.08); C01B 32/97 (2017.08); C04B 35/522 (2013.01); C04B 41/009 (2013.01); C04B 41/5059 (2013.01); C04B 41/87 (2013.01); H01L 21/02425 (2013.01); H01L 21/02529 (2013.01); H01L 21/02612 (2013.01); H01L 21/324 (2013.01); H01L 29/1606 (2013.01); H01L 29/1608 (2013.01); C04B 2111/00405 (2013.01); C04B 2235/3826 (2013.01); C04B 2235/658 (2013.01); C04B 2235/6581 (2013.01); C04B 2235/72 (2013.01); C04B 2235/722 (2013.01); C04B 2235/726 (2013.01); C04B 2235/727 (2013.01); C04B 2235/728 (2013.01); C04B 2235/75 (2013.01); C04B 2235/77 (2013.01); C04B 2235/786 (2013.01); C04B 2235/9607 (2013.01);
Abstract

A silicon carbide-graphite composite is described, including (i) interior bulk graphite material and (ii) exterior silicon carbide matrix material, wherein the interior bulk graphite material and exterior silicon carbide matrix material inter-penetrate one another at an interfacial region therebetween, and wherein graphite is present in inclusions in the exterior silicon carbide matrix material. Such material may be formed by contacting a precursor graphite article with silicon monoxide (SiO) gas under chemical reaction conditions that are effective to convert an exterior portion of the precursor graphite article to a silicon carbide matrix material in which graphite is present in inclusions therein, and wherein the silicon carbide matrix material and interior bulk graphite material interpenetrate one another at an interfacial region therebetween. Such silicon carbide-graphite composite is usefully employed in applications such as implant hard masks in manufacturing solar cells or other optical, optoelectronic, photonic, semiconductor and microelectronic products, as well as in ion implantation system materials, components, and assemblies, such as beam line assemblies, beam steering lenses, ionization chamber liners, beam stops, and ion source chambers.


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