The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Jul. 07, 2021
Applicant:
Qualcomm Incorporated, San Diego, CA (US);
Inventors:
Assignee:
QUALCOMM Incorporated, San Diego, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/24 (2006.01); H01L 29/51 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7831 (2013.01); H01L 27/092 (2013.01); H01L 29/24 (2013.01); H01L 29/517 (2013.01); H01L 29/66969 (2013.01);
Abstract
Disclosed are semiconductor devices including a double gate metal oxide semiconductor (MOS) transistor and methods for fabricating the same. The double gate MOS transistor includes a first back gate, a second back gate, and a first dielectric layer disposed on the first back gate and on the second back gate. An MX2 material layer is disposed on the first dielectric layer, a second dielectric layer disposed on the MX2 material layer, and a work function metal (WFM) is disposed on the second dielectric layer. A front gate is disposed on the WFM, which fills a space between the first back gate and the second back.