The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 25, 2023
Filed:
Mar. 22, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Joo Hyung Lee, Seongnam-si, KR;
Ki Tae Park, Cheonan-si, KR;
Byung Lyul Park, Seoul, KR;
Joon Seok Oh, Seoul, KR;
Jong Ho Yun, Daegu, KR;
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 25/10 (2006.01); H01L 23/00 (2006.01); H01L 25/18 (2023.01); H01L 23/498 (2006.01); H01L 23/31 (2006.01);
U.S. Cl.
CPC ...
H01L 24/24 (2013.01); H01L 24/05 (2013.01); H01L 24/25 (2013.01); H01L 25/105 (2013.01); H01L 25/18 (2013.01); H01L 23/3107 (2013.01); H01L 23/49822 (2013.01); H01L 24/13 (2013.01); H01L 2224/0401 (2013.01); H01L 2224/13024 (2013.01); H01L 2224/2405 (2013.01); H01L 2224/2413 (2013.01); H01L 2224/24155 (2013.01); H01L 2224/2505 (2013.01); H01L 2224/25171 (2013.01); H01L 2224/25174 (2013.01); H01L 2224/82101 (2013.01); H01L 2224/82106 (2013.01); H01L 2225/1035 (2013.01); H01L 2225/1041 (2013.01); H01L 2225/1058 (2013.01);
Abstract
A semiconductor package includes an insulating layer including a first face and a second face opposite each other, a redistribution pattern including a wiring region and a via region in the insulating layer, the wiring region being on the via region, and a first semiconductor chip connected to the redistribution pattern. The first semiconductor chip may be on the redistribution pattern. An upper face of the wiring region may be coplanar with the first face of the insulating layer.