logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11710632 B1

PDFFull Text
Date of Patent:
Jul. 25, 2023

Filed:

Jul. 12, 2021

Method of manufacturing at least one semiconductor device on or in a base semiconductor material disposed in a containment structure including a buried layer

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Hung-Te Lin, Hsinchu, TW;

Hung-Chih Yu, Hsinchu, TW;

Chia-Wei Liu, Hsinchu County, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD, Hsinchu, TW;

Attorney:

Lippes Mathias LLP

Primary Examiner:

Quoc D Hoang

Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/266 (2006.01); H01L 21/761 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02496 (2013.01); H01L 21/02529 (2013.01); H01L 21/02532 (2013.01); H01L 21/266 (2013.01); H01L 21/308 (2013.01); H01L 21/761 (2013.01); H01L 29/66666 (2013.01);
Abstract

In a semiconductor manufacturing method, a mask is disposed on a semiconductor layer or semiconductor substrate. The semiconductor layer or semiconductor substrate is etched in an area delineated by the mask to form a cavity. With the mask disposed on the semiconductor layer or semiconductor substrate, the cavity is lined to form a containment structure. With the mask disposed on the semiconductor layer or semiconductor substrate, the containment structure is filled with a base semiconductor material. After filling the containment structure with the base semiconductor material, the mask is removed. At least one semiconductor device is fabricated in and/or on the base semiconductor material deposited in the containment structure.

Find Patent Forward Citations

Lin, Hung-Te. (2023). Method of manufacturing at least one semiconductor device on or in a base semiconductor material disposed in a containment structure including a buried layer (U.S. Patent No. 11710632). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11710632

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…