The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Oct. 04, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Christopher D. Wieduwilt, Boise, ID (US);

Lawrence D. Smith, Boise, ID (US);

James S. Rehmeyer, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/406 (2006.01); G11C 17/16 (2006.01); G11C 11/4076 (2006.01);
U.S. Cl.
CPC ...
G11C 11/40622 (2013.01); G11C 11/4076 (2013.01); G11C 11/40615 (2013.01); G11C 17/16 (2013.01);
Abstract

First signaling indicative of instructions to enter a self-refresh (SREF) mode can be received concurrently by a plurality of memory dies. Responsive to a memory die of the plurality of memory dies entering the SREF mode, self-refreshing of memory banks of the memory die can be delayed, at the memory die and based on fuse states of an array of fuses of the memory die, an amount of time relative to receipt of the signaling by the memory die. Delaying self-refreshing of memory banks of memory dies in a staggered, or asynchronous, manner can evenly distribute power consumption of the memory dies so that the likelihood of an associated power spike is reduced or eliminated.


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