The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 25, 2023

Filed:

Jun. 22, 2021
Applicant:

Rambus Inc., San Jose, CA (US);

Inventors:

Kenneth L. Wright, Sunnyvale, CA (US);

Frederick A. Ware, Los Altos Hills, CA (US);

Assignee:

Rambus Inc., San Jose, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G06F 11/00 (2006.01); G06F 11/14 (2006.01); H01L 23/00 (2006.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 13/40 (2006.01); H01L 25/065 (2023.01); H01L 25/10 (2006.01);
U.S. Cl.
CPC ...
G06F 11/142 (2013.01); G06F 3/0617 (2013.01); G06F 3/0634 (2013.01); G06F 3/0656 (2013.01); G06F 3/0659 (2013.01); G06F 3/0683 (2013.01); G06F 11/00 (2013.01); G06F 13/1673 (2013.01); G06F 13/4068 (2013.01); H01L 24/00 (2013.01); H01L 24/17 (2013.01); H01L 24/48 (2013.01); H01L 25/0657 (2013.01); H01L 25/105 (2013.01); G06F 11/1423 (2013.01); G06F 2201/805 (2013.01); G06F 2201/82 (2013.01); H01L 24/13 (2013.01); H01L 24/16 (2013.01); H01L 24/32 (2013.01); H01L 2224/16146 (2013.01); H01L 2224/16227 (2013.01); H01L 2224/17181 (2013.01); H01L 2224/32014 (2013.01); H01L 2224/32145 (2013.01); H01L 2224/4824 (2013.01); H01L 2224/48227 (2013.01); H01L 2224/73215 (2013.01); H01L 2224/73265 (2013.01); H01L 2924/00014 (2013.01); H01L 2924/1436 (2013.01); H01L 2924/15311 (2013.01);
Abstract

A memory system includes dynamic random-access memory (DRAM) components that include interconnected and redundant component data interfaces. The redundant interfaces facilitate memory interconnect topologies that accommodate considerably more DRAM components per memory channel than do traditional memory systems, and thus offer considerably more memory capacity per channel, without concomitant reductions in signaling speeds. The memory components can be configured to route data around defective data connections to maintain full capacity and continue to support memory transactions.


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