The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Dec. 20, 2019
Applicant:

Globalfoundries Singapore Pte. Ltd., Singapore, SG;

Inventors:

You Qian, Singapore, SG;

Joan Josep Giner De Haro, Singapore, SG;

Rakesh Kumar, Singapore, SG;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/314 (2013.01); H10N 30/072 (2023.01); H10N 30/074 (2023.01); H10N 30/85 (2023.01); H10N 30/87 (2023.01);
U.S. Cl.
CPC ...
H10N 30/072 (2023.02); H10N 30/074 (2023.02); H10N 30/85 (2023.02); H10N 30/87 (2023.02);
Abstract

A semiconductor device may include: a substrate wafer, a bonding layer at least partially covering a front surface of the substrate wafer, a plurality of silicon pillars bonded to the front surface of the substrate wafer by the bonding layer, a single-crystal piezoelectric film having a first surface and an opposing second surface, a top electrode arranged adjacent to the first surface of the single-crystal piezoelectric film, and a bottom electrode arranged adjacent to the second surface of the single-crystal piezoelectric film. The single-crystal piezoelectric film may be supported by the plurality of silicon pillars such that the second surface of the piezoelectric film and the front surface of the substrate wafer enclose a cavity therebetween.


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