The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Dec. 15, 2021
Applicant:
Globalfoundries U.s. Inc., Malta, NY (US);
Inventors:
Yusheng Bian, Ballston Lake, NY (US);
Asif Chowdhury, Clifton Park, NY (US);
Assignee:
GlobalFoundries U.S. Inc., Malta, NY (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/0232 (2014.01); H01L 31/18 (2006.01); H01L 31/0203 (2014.01); H01L 31/101 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02327 (2013.01); H01L 31/0203 (2013.01); H01L 31/101 (2013.01); H01L 31/18 (2013.01);
Abstract
Structures for a photodetector and methods of fabricating a structure for a photodetector. The structure includes a first waveguide core having a first taper, a semiconductor layer having a sidewall adjacent to the first taper, and a second waveguide core having a second taper that is positioned to overlap with the first taper and a curved section. The second taper is longitudinally positioned between the sidewall of the semiconductor layer and the curved section. The curved section terminates the second waveguide core.