The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Mar. 29, 2021
Applicant:

Unisantis Electronics Singapore Pte. Ltd., Singapore, SG;

Inventors:

Fujio Masuoka, Tokyo, JP;

Nozomu Harada, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/30 (2006.01); H01L 21/308 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/3085 (2013.01); H01L 21/02587 (2013.01); H01L 29/1054 (2013.01); H01L 29/66666 (2013.01);
Abstract

A band-shaped Si pillar having a mask material layer on the top portion thereof is formed on a P+ layer. SiGe layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the band-shaped Si pillar and the surfaces of N+ layers and the P+ layer. Si layers having mask material layers on the top portions thereof are then formed in contact with the side surfaces of the SiGe layers and the surfaces of the N+ layers. The outer peripheries of the bottom portions of the Si layers are then removed using the mask material layers as a mask to form band-shaped Si pillars. The mask material layers and the SiGe layers are then removed. Si pillars separated in the Y direction are then formed in the band-shaped Si pillars.


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Masuoka, Fujio. (2023). Method for manufacturing pillar-shaped semiconductor device (U.S. Patent No. 11705338). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11705338

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