The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Mar. 30, 2020
Applicant:
Micron Technology, Inc., Boise, ID (US);
Inventor:
Yoshinori Fujiwara, Boise, ID (US);
Assignee:
Micron Technologv. Inc., Boise, ID (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 29/00 (2006.01); G11C 29/18 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 29/18 (2013.01); G11C 29/50012 (2013.01);
Abstract
Apparatuses, systems, and methods for self-test mode abort circuit. Memory devices may enter a self-test mode and perform testing operations on the memory array. During the self-test mode, the memory device may ignore external communications. The memory includes an abort circuit which may terminate the self-test mode if it fails to properly finish. For example, the abort circuit may count an amount of time since the self-test mode began and end the self-test mode if that amount of time meets or exceeds a threshold, which may be based off of the expected amount of time for the testing operations to complete.