The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Apr. 26, 2021
Applicant:

Yangtze Memory Technologies Co., Ltd., Wuhan, CN;

Inventors:

Ying Cui, Wuhan, CN;

Jianquan Jia, Wuhan, CN;

Kaikai You, Wuhan, CN;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/56 (2006.01); G11C 16/04 (2006.01); G11C 16/24 (2006.01); H10B 41/27 (2023.01);
U.S. Cl.
CPC ...
G11C 11/5628 (2013.01); G11C 16/0483 (2013.01); G11C 16/24 (2013.01); H10B 41/27 (2023.02);
Abstract

A memory device includes memory cells in rows, word lines respectively coupled to the rows, and a control circuitry coupled to the memory cells via the word lines. The control circuitry is configured to apply a first program voltage to a first word line of the word lines. The first word line is coupled to a first row of the memory cells. The control circuitry is also configured to, after applying the first program voltage to the first word line, apply a second program voltage to a second word line of the word lines. The second word line is coupled to a second row of the memory cells. The control circuitry is also configured to, after applying the second program voltage to the second word line, apply a first pre-charge voltage to the first word line and a second pre-charge voltage to the second word line. The second pre-charge voltage is greater than the first pre-charge voltage.


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