The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 18, 2023
Filed:
Aug. 10, 2020
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Bo Qi, San Jose, CA (US);
Huiyuan Wang, Santa Clara, CA (US);
Yingli Rao, Palo Alto, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); C23C 16/56 (2006.01); C23C 16/455 (2006.01); H10B 12/00 (2023.01); H10B 41/20 (2023.01); H10B 41/35 (2023.01);
U.S. Cl.
CPC ...
C23C 16/56 (2013.01); C23C 16/30 (2013.01); C23C 16/45529 (2013.01); H10B 12/02 (2023.02); H10B 12/30 (2023.02); H10B 41/20 (2023.02); H10B 41/35 (2023.02);
Abstract
A non-conformal, highly selective liner for etch methods in semiconductor devices is described. A method comprises forming a film stack on a substrate; etching the film stack to form an opening; depositing a non-conformal liner in the opening; etching the non-conformal liner from the bottom of the opening; and selectively etching the film stack relative to the non-conformal liner to form a logic or memory hole. The non-conformal liner comprises one or more of boron, carbon, or nitrogen.