The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 18, 2023

Filed:

Jul. 12, 2021
Applicant:

Versum Materials Us, Llc, Tempe, AZ (US);

Inventors:

Xinjian Lei, Vista, CA (US);

Matthew R. MacDonald, Laguna Niguel, CA (US);

Meiliang Wang, Shanghai, CN;

Assignee:

Versum Materials US, LLC, Tempe, AZ (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); C23C 16/40 (2006.01); C23C 16/34 (2006.01); C07F 7/02 (2006.01); C07F 7/10 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45553 (2013.01); C23C 16/345 (2013.01); C23C 16/402 (2013.01); C23C 16/45542 (2013.01); C07F 7/025 (2013.01); C07F 7/10 (2013.01);
Abstract

Described herein are compositions and methods for forming silicon and oxygen containing films. In one aspect, the film is deposited from at least one precursor, wherein the at least one precursor selected from the group consisting of Formula C: as defined herein.


Find Patent Forward Citations

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Lei, Xinjian. (2023). Trisilylamine derivatives as precursors for high growth rate silicon-containing films (U.S. Patent No. 11702743). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11702743

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