The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Aug. 30, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jinseong Heo, Seoul, KR;

Taehwan Moon, Suwon-si, KR;

Hagyoul Bae, Hanam-si, KR;

Seunggeol Nam, Suwon-si, KR;

Sangwook Kim, Seongnam-si, KR;

Kwanghee Lee, Hwaseong-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/86 (2006.01); H10K 10/50 (2023.01); H10K 19/00 (2023.01); H10B 69/00 (2023.01);
U.S. Cl.
CPC ...
H01L 29/86 (2013.01); H10B 69/00 (2023.02); H10K 10/50 (2023.02); H10K 19/00 (2023.02); H10K 19/201 (2023.02);
Abstract

A semiconductor apparatus includes a plurality of semiconductor devices. The semiconductor devices each include a ferroelectric layer, a conductive metal oxide layer, and a semiconductor layer, between two electrodes. The conductive metal oxide layer may be between the ferroelectric layer and the semiconductor layer. The ferroelectric layer, the conductive metal oxide layer, and the semiconductor layer may all include a metal oxide. The conductive metal oxide layer may include one or more materials selected from the group consisting of an indium oxide, a zinc oxide, a tin oxide, and any combination thereof.


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