The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Nov. 14, 2019
Applicant:

Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;

Inventors:

Hsing-Hsiang Wang, Hsin-Chu, TW;

Yu-Hsiang Lin, Hsin-Chu, TW;

Wei-Da Chen, Hsin-Chu, TW;

Tom Peng, Hsin-Chu, TW;

P. Y. Chiu, Hsin-Chu, TW;

Miau-Shing Tsai, Hsin-Chu, TW;

Cheng-Yi Huang, Hsin-Chu, TW;

Ching-Horng Chen, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/321 (2006.01); H01L 21/3213 (2006.01); H01L 21/027 (2006.01); H01L 21/3105 (2006.01); H01J 37/32 (2006.01); H01L 21/67 (2006.01); H01L 21/677 (2006.01); H01L 21/683 (2006.01);
U.S. Cl.
CPC ...
H01L 21/32139 (2013.01); H01J 37/3211 (2013.01); H01J 37/32715 (2013.01); H01L 21/0273 (2013.01); H01L 21/31058 (2013.01); H01L 21/32133 (2013.01); H01L 21/67069 (2013.01); H01L 21/67167 (2013.01); H01L 21/67201 (2013.01); H01L 21/67742 (2013.01); H01L 21/6833 (2013.01); H01J 2237/3342 (2013.01);
Abstract

In an embodiment, a method includes: receiving, within a processing chamber, a wafer with a photoresist mask above a metal layer, wherein the processing chamber is connected to a gas source; applying an etchant configured to etch the metal layer in accordance with the photoresist mask within the processing chamber; and applying gas from the gas source to perform plasma ashing in the processing chamber.


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