The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Jan. 26, 2021
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Jeyavel Velmurugan, Gaithersburg, MD (US);

Bryan L. Buckalew, Tualatin, OR (US);

Thomas A. Ponnuswamy, Sherwood, OR (US);

Assignee:

Lam Research Corporation, Fremont, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); C25D 3/38 (2006.01); C25D 17/00 (2006.01); C25D 17/06 (2006.01); C25D 5/10 (2006.01); C25D 5/34 (2006.01); H01L 21/321 (2006.01); H01L 23/532 (2006.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); C25D 5/18 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); C25D 3/38 (2013.01); C25D 5/10 (2013.01); C25D 5/18 (2013.01); C25D 5/34 (2013.01); C25D 17/001 (2013.01); C25D 17/06 (2013.01); H01L 21/28568 (2013.01); H01L 21/3212 (2013.01); H01L 21/7684 (2013.01); H01L 21/76846 (2013.01); H01L 21/76873 (2013.01); H01L 21/76879 (2013.01); H01L 23/53209 (2013.01); H01L 23/53238 (2013.01);
Abstract

In one example, an electroplating system comprises a first bath reservoir, a second bath reservoir, a clamp, a first anode in the first bath reservoir, a second anode in the second bath reservoir, and a direct current power supply. The first bath reservoir contains a first electrolyte solution that includes an alkaline copper-complexed solution. The second bath reservoir contains a second electrolyte solution that includes an acidic copper plating solution. The direct current power supply generates a first direct current between the clamp and the first anode to electroplate a first copper layer on the cobalt layer of the wafer submerged in the first electrolyte solution. The direct current power supply then generates a second direct current between the clamp and the second anode to electroplate a second copper layer on the first copper layer of the wafer submerged in the second electrolyte solution.


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