The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Apr. 21, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Adam S. El-Mansouri, Boise, ID (US);

David L. Pinney, Boise, ID (US);

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 11/22 (2006.01); G11C 8/10 (2006.01); G11C 8/08 (2006.01);
U.S. Cl.
CPC ...
G11C 11/221 (2013.01); G11C 8/08 (2013.01); G11C 8/10 (2013.01); G11C 11/2255 (2013.01); G11C 11/2257 (2013.01); G11C 11/2259 (2013.01); G11C 11/2273 (2013.01); G11C 11/2275 (2013.01); G11C 11/2293 (2013.01);
Abstract

Methods, systems, and devices for ferroelectric memory plate power reduction are described. A plate line may be coupled with a voltage source, a capacitor, and one or more sections of a bank of ferroelectric memory cells. During a write operation, the capacitor may be discharged onto the plate line and the resulting voltage may be adjusted (e.g., increased) by the voltage source before writing one or more memory cells. During a write-back operation, a capacitor associated with one or more memory cells may be discharged onto the plate line and stored at the capacitor. The charge may be re-applied to the plate line and adjusted (e.g., increased) by the voltage source during the write-back.


Find Patent Forward Citations

Loading…