The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Oct. 27, 2021
Applicant:

Micron Technology, Inc., Boise, ID (US);

Inventors:

Shantanu R. Rajwade, Santa Clara, CA (US);

Pranav Kalavade, Santa Clara, CA (US);

Toru Tanzawa, Tokyo, JP;

Assignee:

Micron Technology, Inc., Boise, ID (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/06 (2006.01); G06F 13/16 (2006.01); G06F 13/42 (2006.01); G11C 16/26 (2006.01); G11C 16/30 (2006.01); G11C 8/12 (2006.01); G11C 11/56 (2006.01); G11C 16/08 (2006.01); G11C 13/00 (2006.01); G11C 16/04 (2006.01);
U.S. Cl.
CPC ...
G06F 3/0604 (2013.01); G06F 3/0629 (2013.01); G06F 3/0673 (2013.01); G06F 13/16 (2013.01); G06F 13/42 (2013.01); G11C 8/12 (2013.01); G11C 11/5642 (2013.01); G11C 16/08 (2013.01); G11C 16/26 (2013.01); G11C 16/30 (2013.01); G11C 13/0004 (2013.01); G11C 13/004 (2013.01); G11C 13/0038 (2013.01); G11C 16/0483 (2013.01); G11C 2207/2209 (2013.01);
Abstract

Apparatuses and methods for performing concurrent memory access operations for multiple memory planes are disclosed herein. An example method may include receiving first and second command and address pairs associated with first and second plane, respectively, of a memory. The method may further include, responsive to receiving the first and second command and address pairs, providing a first and second read voltages based on first and second page type determined from the first and second command and address pair. The method may further include configuring a first GAL decoder circuit to provide one of the first read voltage or a pass voltage on each GAL of a first GAL bus. The method may further include configuring a second GAL decoder circuit to provide one of the second read level voltage signal or the pass voltage signal on each GAL of a second GAL bus coupled to the second memory plane.


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