The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 11, 2023

Filed:

Dec. 18, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Alexander Reznicek, Troy, NY (US);

Karthik Balakrishnan, Scarsdale, NY (US);

Stephen W. Bedell, Wappingers Falls, NY (US);

Pouya Hashemi, Purchase, NY (US);

Bahman Hekmatshoartabari, White Plains, NY (US);

Keith E. Fogel, Hopewell Junction, NY (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/04 (2006.01); H01L 29/06 (2006.01); H01L 21/683 (2006.01); H01L 21/02 (2006.01); H01L 23/498 (2006.01); C30B 25/18 (2006.01); C30B 33/06 (2006.01); C30B 29/64 (2006.01); H01L 21/18 (2006.01); C30B 29/52 (2006.01); B32B 3/30 (2006.01); B23B 3/30 (2006.01); B32B 3/28 (2006.01);
U.S. Cl.
CPC ...
C30B 29/06 (2013.01); B23B 3/30 (2013.01); B32B 3/28 (2013.01); B32B 3/30 (2013.01); C30B 25/18 (2013.01); C30B 29/52 (2013.01); C30B 29/64 (2013.01); C30B 33/06 (2013.01); H01L 21/0245 (2013.01); H01L 21/0262 (2013.01); H01L 21/02381 (2013.01); H01L 21/02422 (2013.01); H01L 21/02433 (2013.01); H01L 21/02494 (2013.01); H01L 21/02532 (2013.01); H01L 21/02587 (2013.01); H01L 21/02664 (2013.01); H01L 21/185 (2013.01); H01L 21/6835 (2013.01); H01L 23/4985 (2013.01); H01L 29/04 (2013.01); H01L 29/0657 (2013.01); H01L 29/16 (2013.01); H01L 21/02598 (2013.01); H01L 2221/68345 (2013.01); H01L 2221/68381 (2013.01);
Abstract

A structure including a three-dimensionally stretchable single crystalline semiconductor membrane located on a substrate is provided. The structure is formed by providing a three-dimensional (3D) wavy silicon germanium alloy layer on a silicon handler substrate. A single crystalline semiconductor material membrane is then formed on a physically exposed surface of the 3D wavy silicon germanium alloy layer. A substrate is then formed on a physically exposed surface of the single crystalline semiconductor material membrane. The 3D wavy silicon germanium alloy layer and the silicon handler substrate are thereafter removed providing the structure.


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